Lateral oxidation of InAlAs in InP-based heterostructures for long wavelength vertical cavity surface emitting laser applications
نویسندگان
چکیده
We have studied the wet thermal oxidation of In0.52Al0.48As and its potential application in current and optical confinement in vertical cavity surface emitting lasers VCSELs . Two types of InP-based heterostructures were used to study the effect of adjacent layer compositions on the lateral oxidation behavior of the InAlAs. It was found that the oxidation of In0.52Al0.48As with InP adjacent layers, compared with In0.53Ga0.47As adjacent layers, proceeded faster, more uniformly and with minimal degradation of the surrounding layers making it ideal for optoelectronic applications. © 1998 American Institute of Physics. S0003-6951 98 00602-0
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تاریخ انتشار 2001